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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1916
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1916 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.32 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
2.8 0.2
6
5
4
1.5
FEATURES
* 1.8 V drive available * Low on-state resistance RDS(on)1 = 39 m MAX. (VGS = -4.5 V, ID = -2.5 A) RDS(on)2 = 49 m MAX. (VGS = -3.0 V, ID = -2.5 A) RDS(on)3 = 55 m MAX. (VGS = -2.5 V, ID = -2.5 A) RDS(on)4 = 98 m MAX. (VGS = -1.8 V, ID = -1.5 A)
0 to 0.1
1 2 3
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain 3 : Gate 4 : Source
PA1916TE
Note
Note Marking: TL
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
-12 m8.0 m4.5 m18 0.2 2.0 150 -55 to +150
V V A A W W C C
Gate Gate Protection Diode
Body Diode
Total Power Dissipation (TA = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec. Remark
Source
PT2 Tch Tstg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15635EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan
(c)
2001
PA1916
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = -10 V VGS = -4.0 V ID = -4.5 A IF = 4.5 A, VGS = 0 V TEST CONDITIONS VDS = -12 V, VGS = 0 V VGS = m8.0 V, VDS = 0 V VDS = -10 V, ID = -1.0 mA VDS = -10 V, ID = -2.5 A VGS = -4.5 V, ID = -2.5 A VGS = -3.0 V, ID = -2.5 A VGS = -2.5 V, ID = -2.5 A VGS = -1.8 V, ID = -1.5 A VDS = -10 V VGS = 0 V f = 1.0 MHz VDD = -6.0 V, ID = -2.5 A VGS = -4.0 V RG = 10 -0.45 3.0 30 36 41 59 950 330 170 15 15 140 120 8.0 1.5 2.5 0.84 39 49 55 98 -0.8 MIN. TYP. MAX. -10 m10 -1.5 UNIT
A A
V S m m m m pF pF pF ns ns ns ns nC nC nC V
TEST CIRCUIT 1 SWITCHING TIME
VGS(-) D.U.T. RL PG. RG VDD
VDS
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = -2 mA 50 RL VDD
VGS
Wave Form
0
10 %
VGS
90 %
VDS(-)
90 % 90 % 10 % 10 %
PG.
VDS VGS (-) 0 = 1 s Duty Cycle 1%
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet G15635EJ1V0DS
PA1916
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
-100
d ite V) Lim 4.5 -
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
dT - Derating Factor - %
80
ID - Drain Current - A
-10
RD GS = V (@
n) S(o
PW
=1
ID(DC)
60
-1
10 ms 10 0m s 5s
ms
40
20 0 0
-0.1
30
60
90
120
150
-0.01 -0.1
Single Pulse Mounted on 250 mm2 x 35 m copper pad connected to drain erectrode in 50 mm x 50 mm x 1.6 mm FR-4 board.
-1
-10
-100
TA - Ambient Temperature - C
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -20 -16
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS -100 VDS = -10 V
Pulsed VGS = -4.5 V -4.0 V
ID - Drain Current - A
-10 -1 -0.1 -0.01 -0.001 -0.0001 TA = 125C 75C TA = 25C -25C
-12 -8 -4 0 0 -1.8 V
-2.5 V
-0.2
-0.4
-0.6
-0.8
-1
-0.00001
0
-1
-2
-3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = -10 V TA = -25C 25C 75C 125C
-1.2
VDS = -10 V ID = -1 mA
10
-0.7
1
0.1
-0.2 -50
0
50
100
150
0.01 -0.01
-0.1
-1
-10
-100
Tch - Channel Temperature - C
ID - Drain Current - A
Data Sheet G15635EJ1V0DS
3
PA1916
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = -1.8 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = -2.5 V
80
80
TA = 125C
60
TA = 125C 75C 25C -25C
60
75C 25C -25C
40
40 -0.01
-0.1
-1
-10
20 -0.01
-0.1
-1
-10
-100
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 VGS = -3.0 V
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = -4.5 V
60
50
50
TA = 125C 75C
40
TA = 125C 75C
40
25C -25C
30
25C -25C
30 20 -0.01
20 10 -0.01
-0.1
-1
-10
-100
-0.1
-1
-10
-100
ID - Drain Current - A
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
100
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = -2.5 A
VGS = -1.8 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 100 80 60 40 20 0 -2 -4 -6 -8 ID = -2.5 A
80
60
-2.5 V -3.0 V -4.5 V
40
20
0 -50
0
50
100
150
0
Tch - Channel Temperature - C
VGS - Gate to Source Voltage - V
4
Data Sheet G15635EJ1V0DS
PA1916
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
f = 1 MHz VGS = 0 V
td(off) 100 tf
1000
Ciss Coss Crss
td(on) 10 tr 1 -0.1
VDD = -6.0 V VGS = -4.0 V RG = 10
100
10 -0.1
-1.0
-10
-100
-1 ID - Drain Current - A
-10
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
ISD - Diode Forward Current - A
VGS - Gate to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 ID = -4.5 A -4 -3 -2 -1 VDD = -10 V -6.0 V
10
1
0.1
0.01 0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
VSD - Source to Drain Voltage - V
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Single Pulse
rth(ch-A) - Transient Thermal Resistance - C/W
Without board
100
Mounted on 250mm2 x 35 m copper pad connected to drain electrode in 50mm x 50mmx1.6mm FR-4 board
10
1 0.001
0.01
0.1
1 PW - Pulse Width - s
10
100
1000
Data Sheet G15635EJ1V0DS
5
PA1916
[MEMO]
6
Data Sheet G15635EJ1V0DS
PA1916
[MEMO]
Data Sheet G15635EJ1V0DS
7
PA1916
* The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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